Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals

Suwa, T.; Teramoto, A.; Kumagai, Y.; Abe, K.; Li, X.; Nakao, Y.; Yamamoto, M.; Kato, Y.; Muro, T.; Kinoshita, T.; Ohmi, T.; Hattori, T.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173103
Academic Journal
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and a valence band with the same probing depth. We clarified that (1) the SiO2/Si interfaces formed exhibited an almost abrupt compositional transition, (2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2/Si(100) interface.


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