Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

De Keyser, K.; Van Bockstael, C.; Van Meirhaeghe, R. L.; Detavernier, C.; Verleysen, E.; Bender, H.; Vandervorst, W.; Jordan-Sweet, J.; Lavoie, C.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173503
Academic Journal
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1–10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 °C/s, 5–10 nm Ni films react with silicon and form NiSi, which agglomerates at 550–650 °C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 °C.


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