High integrity metal/organic device interfaces via low temperature buffer layer assisted metal atom nucleation

Maitani, Masato M.; Allara, David L.; Ohlberg, Douglas A. A.; Li, Zhiyong; Williams, R. Stanley; Stewart, Duncan R.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173109
Academic Journal
The ability to generate sharp, high integrity metal/organic film interfaces is demonstrated by the use of a buffer layer of Xe condensate during the vapor deposition of Au atoms onto a CH3(CH2)11S-/Au{111} self-assembled monolayer (SAM), a normally highly permeable film for the metal atoms in spite of the high degree of molecular organization and ordering. Atomic force microscopy conductance and topographic imaging reveals the intervening buffer can result in complete elimination of typical electrically shorting metal filaments and metal atom penetration into the SAM over large area contacts. This deposition method provides a highly reproducible way to form high integrity top metal contacts for demanding applications such as molecular electronic devices.


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