Static dielectric constant of Al nanocrystal/Al2O3 nanocomposite thin films determined by the capacitance-voltage reconstruction technique

Liu, Z.; Chen, T. P.; Liu, Y.; Yang, M.; Wong, J. I.; Cen, Z. H.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173110
Academic Journal
Al nanocrystal (nc-Al)/Al2O3 nanocomposite thin films were synthesized by radio-frequency magnetron sputtering. The static dielectric constant ([variant_greek_epsilon]r) of the nanocomposite thin films was determined by the capacitance-voltage reconstruction technique which was able to correct for the influence of high current conduction in the thin films. In contrast to pure Al2O3, the nanocomposite has a much higher [variant_greek_epsilon]r and its [variant_greek_epsilon]r exhibits strong temperature dependence also. The higher [variant_greek_epsilon]r is attributed to the dipole effect of the Al–O dangling bonds due to the presence of nc-Al in the Al2O3 matrix. However, the dipole effect degrades at a higher temperature, which explains the observed decrease in [variant_greek_epsilon]r with increasing temperature.


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