TITLE

Twinning Ge0.54Si0.46 nanocrystal growth mechanism in amorphous SiO2 films

AUTHOR(S)
Liu, L. Z.; Wu, X. L.; Li, T. H.; Chu, Paul K.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ge0.54Si0.46 alloy nanocrystals (NCs) with different twinning structures are synthesized by magnetron sputtering followed by high temperature (>1100 °C) annealing and rapid cooling. The local strain induced by rapid cooling enables neighboring NCs to coalesce quickly. Because of insufficient time to form individual structures, a leading twinning interface forms inevitably in the interior of the NCs. The twinning NCs with large surface free energies reconstruct for energy optimization at high temperature. Consequently, the twinning layer thickness shrinks slowly, finally transforming into untwined stable NCs with the lowest surface free energy. Our experimental observations are corroborated by theoretical calculation.
ACCESSION #
50173960

 

Related Articles

  • Ultrathin amorphous Si layer for the growth of strain relaxed Si0.75Ge0.25 alloy layer. Rahman, M. M.; Zheng, S. Q.; Mori, M.; Tambo, T.; Tatsuyama, C. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053505 

    We propose a method for the growth of strain relaxed and smooth Si0.75Ge0.25 alloy layers on a Si(001) substrate. In this method, we have used an ultrathin amorphous Si (UTA-Si) layer as a buffer layer and implemented a two-step process to grow the top alloy layer. High-resolution x-ray...

  • Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering. Zhang, B.; Shrestha, S.; Green, M. A.; Conibeer, G. // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p261901 

    A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 °C. The...

  • High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films. Rudder, R. A.; Cook, J. W.; Lucovsky, G. // Applied Physics Letters;1984, Vol. 45 Issue 8, p887 

    Thin-film alloys of amorphous hydrogenated silicon and germanium have been grown by dual magnetron sputtering in a chamber with an ultrahigh vacuum base pressure. Photoconductivities greater than 10-7 (Ω cm)-1 with a light flux of 1015 photons/(cm2 s) were obtained for approximately equal...

  • An Atomistic Model of Stressed Si Solid-Phase Epitaxy. Rudawski, N. G.; Jones, K. S.; Gwilliam, R. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p205 

    An atomistic model of stressed solid-phase epitaxial growth of ion-implanted Si is presented. Macroscopic growth kinetics are modeled as the result of crystal island nucleation and subsequent island ledge migration in the growth interface between amorphous and crystalline phases with a...

  • Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing. Haberl, B.; Bogle, S. N.; Li, T.; McKerracher, I.; Ruffell, S.; Munroe, P.; Williams, J. S.; Abelson, J. R.; Bradby, J. E. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 9, p096104 

    We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant...

  • Analysis for piezoresistive property of heavily-doped polysilicon with upper and lower bounds. Matsuzuka, Naoki; Toriyama, Toshiyuki // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064902 

    This paper proposed an analysis for the piezoresistive property of heavily-doped polycrystalline silicon (polysilicon) with upper and lower bounds derived using the fundamental piezoresistive coefficients of single-crystalline silicon (SCS). The analysis is applicable to the polysilicon that the...

  • Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy. Talochkin, A. B.; Mashanov, V. I. // Applied Physics Letters;12/29/2014, Vol. 105 Issue 26, p1 

    GeSn alloys grown on Si(100) by the low-temperature (100 °C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the...

  • Probing the phase composition of silicon films in situ by etch product detection. Dingemans, G.; van den Donker, M. N.; Gordijn, A.; Kessels, W. M. M.; van de Sanden, M. C. M. // Applied Physics Letters;10/15/2007, Vol. 91 Issue 16, p161902 

    Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H2 plasma treatment...

  • Ion-beam-induced amorphization and recrystallization in silicon. Pelaz, Lourdes; Marqués, Luis A.; Barbolla, Juan // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p5947 

    Ion-beam-induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. A number of theoretical calculations and experiments were designed to provide a better understanding of the mechanisms behind the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics