TITLE

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

AUTHOR(S)
Li, Wei; Pessa, Markus; Ahlgren, Tommy; Decker, James
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1094
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Positron-annihilation measurements and nuclear reaction analysis [utilizing the [sup 14]N(d,p)[sup 15]N and [sup 14]N(d,He)[sup 12]C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy using a radio-frequency plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown nitride–arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing. © 2001 American Institute of Physics.
ACCESSION #
5017226

 

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