Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing

Solmi, S.; Mancini, L.; Milita, S.; Servidori, M.; Mannino, G.; Bersani, M.
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1103
Academic Journal
Boron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range 2×10[sup 13]–1×10[sup 14] cm[sup -2] and annealed at 740 °C for times between 2 s and 4 h. The values of interstitial supersaturation, from the beginning of the annealing up to the complete damage recovery, have been determined for the different Si doses for a given B doping level. Damage removal has been followed by double crystal x-ray diffraction. Our results confirm that the formation of boron-interstitial silicon clusters traps a relevant fraction of the interstitials produced by the implantation. This trapping action gives rise to a strong reduction of the interstitial supersaturation, prevents the interstitial clusters from being transformed in {113} defects and modifies the time evolution of the transient enhanced diffusion. X-ray analyses indicate also that the size of the boron-interstitial silicon clusters remains below 2 nm. © 2001 American Institute of Physics.


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