Suppression of lateral fluctuations in CdSe-based quantum wells

Kurtz, E.; Schmidt, M.; Baldauf, M.; Wachter, S.; Gru¨n, M.; Kalt, H.; Klingshirn, C.; Litvinov, D.; Rosenauer, A.; Gerthsen, D.
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1118
Academic Journal
We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. © 2001 American Institute of Physics.


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