Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs

Zhang, X. B.; Ha, K. L.; Hark, S. K.
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1127
Academic Journal
ZnSe epilayers were grown on a (001) GaAs substrate by metalorganic chemical-vapor-phase deposition. An interruption of the Zn source (i.e., Se passivation) was purposely introduced during the growth. The optical properties of the epilayers grown were studied by photoluminescence (PL) spectroscopy. We show that Se passivation during the growth interruption introduces luminescent centers in the epilayers. Evidence of this assignment comes from the characteristic temperature and excitation wavelength dependence of the PL spectra, which are distinctly different from those of commonly observed deep-level emissions associated with the so-called self-activated centers. Moreover, the PL peak energy of the centers depends strongly on the coverage of Se: the longer the time or the higher the flow rate of the Se precursor used for the passivation, the lower the energy of its PL peak. The possible origin of this luminescence is discussed. © 2001 American Institute of Physics.


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