TITLE

Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs

AUTHOR(S)
Zhang, X. B.; Ha, K. L.; Hark, S. K.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1127
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnSe epilayers were grown on a (001) GaAs substrate by metalorganic chemical-vapor-phase deposition. An interruption of the Zn source (i.e., Se passivation) was purposely introduced during the growth. The optical properties of the epilayers grown were studied by photoluminescence (PL) spectroscopy. We show that Se passivation during the growth interruption introduces luminescent centers in the epilayers. Evidence of this assignment comes from the characteristic temperature and excitation wavelength dependence of the PL spectra, which are distinctly different from those of commonly observed deep-level emissions associated with the so-called self-activated centers. Moreover, the PL peak energy of the centers depends strongly on the coverage of Se: the longer the time or the higher the flow rate of the Se precursor used for the passivation, the lower the energy of its PL peak. The possible origin of this luminescence is discussed. © 2001 American Institute of Physics.
ACCESSION #
5017214

 

Related Articles

  • Optical and Electrical Properties of Pure and Y-Doped n-SnSe Films Deposited by Chemical Bath Deposition. He, H. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Sep2015, Vol. 67 Issue 9, p2071 

    Pure and Y-doped SnSe films were fabricated by chemical bath deposition. The deposited films were characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometry, photoluminescence spectrophotometry, and electrical...

  • Spontaneous and stimulated emission from photopumped GaN grown on SiC. Zubrilov, A.S.; Nikolaev, V.I. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p533 

    Examines the photoluminescence of gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition. Calculation of the temperature dependence of GaN band gap; Shift of photoluminescence output to lower photon energy; Observation of edge cavity stimulated...

  • Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure. Culp, T.D.; Hommerich, U. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p368 

    Studies the photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er as a function of temperature and applied hydrostatic pressure. Spectral characteristics; Effects on the low temperature density; Thermal quenching properties.

  • Synthesis of 3C–SiC nanowhiskers and emission of visible photoluminescence. Zhang, Yafei; Nishitani-Gamo, Mikka; Xiao, Changyong; Ando, Toshihiro // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6066 

    Single-crystal 3C–SiC nanowhiskers with [111] axial orientation have been synthesized directly on an Si substrate with a large area and high surface density. The nanowhiskers were grown into the Si substrate like a foundation pile by using an Fe film as a catalyst in a microwave plasma...

  • Photoluminescence and transport studies of boron in 4h SiC. Sridhara, S.G.; Clemen, L.L.; Devaty, R.P.; Choyke, W.J.; Larkin, D.J.; Kong, H.S.; Troffer, T.; Pensl, G. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7909 

    Provides information on an experiment which investigated the low temperature photoluminescence (LTPL) of the recombination of a neutral receptor (bound exciton) complex for silicon site boron observed in homoepitaxial films of 4H SiC grown by chemical vapor deposition (CVD). Methodology used to...

  • Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Nittono, Takumi; Sugitani, Suehiro; Hyuga, Fumiaki // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5387 

    Presents a study which characterized the photoluminescence of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Experimental details; Results and discussion; Conclusion.

  • Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with... Sieg, R.M.; Ringel, S.A. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p448 

    Analyzes the effects of reabsorption and band-gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n-InP grown by metalorganic chemical vapor deposition. Measured PL spectra of InP; Reabsorption effects on the photoluminescence spectra; Band-gap narrowing near Brillouin zone...

  • Photoluminescence spectroscopy of Mg-doped GaN. Sheu, J.K.; Su, Y.K. // Journal of Applied Physics;10/15/1998, Vol. 84 Issue 8, p4590 

    Presents a study in which Mg-doped GaN films were grown by metalorganic chemical vapor deposition with various Cp2Mg flow rates. Methodology used to conduct the study; Exploration of the origin of the observed emission band; Characterization of Mg-doped p-type GaN films; Findings of the study.

  • Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition. Diaz, J.; Yi, H. J.; Erdtmann, M.; He, X.; Kolev, E.; Garbuzov, D.; Bigan, E.; Razeghi, M. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p700 

    Reports on special double- and separate-confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements which were grown by low-pressure metal-organic chemical-vapor deposition. Sample and experimental details; Results and discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics