Predicted maximum mobility in bulk GaN

Look, D. C.; Sizelove, J. R.
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1133
Academic Journal
A 300 K bulk (three-dimensional) mobility of 1245 cm[sup 2]/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (N[sub D]) and acceptor (N[sub A]) concentrations, which are N[sub D]=6.7×10[sup 15] and N[sub A]=1.7×10[sup 15] cm[sup -3]. Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of N[sub D] and N[sub A], leading to a maximum 300 K mobility of 1350 cm[sup 2]/V s, and a maximum 77 K mobility of 19 200 cm[sup 2]/V s. © 2001 American Institute of Physics.


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