Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Shigekawa, Naoteru; Shiojima, Kenji; Suemitsu, Tetsuya
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1196
Academic Journal
Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate–bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge. © 2001 American Institute of Physics.


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