TITLE

Charge-imaging field-effect transistor

AUTHOR(S)
Chen, L. H.; Topinka, M. A.; LeRoy, B. J.; Westervelt, R. M.; Maranowski, K. D.; Gossard, A. C.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1202
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T=4.2 K has a 1/f behavior and reaches values <1e/Hz[sup 1/2] at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.
ACCESSION #
5017189

 

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