Charge-imaging field-effect transistor

Chen, L. H.; Topinka, M. A.; LeRoy, B. J.; Westervelt, R. M.; Maranowski, K. D.; Gossard, A. C.
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1202
Academic Journal
Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T=4.2 K has a 1/f behavior and reaches values <1e/Hz[sup 1/2] at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.


Related Articles

  • Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Amani, Matin; Chin, Matthew L.; Birdwell, A. Glen; O'Regan, Terrance P.; Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193107 

    Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning...

  • Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for Pocket Implanted Nano Scale n-MOSFET. Bhuyan, Muhibul Haque; Mohammedy, Farseem Mannan; Khosru, Quazi Deen Mohd // World Academy of Science, Engineering & Technology;Aug2011, Issue 56, p1156 

    This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance...

  • High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices. Zhang, L.; Koike, M.; Takeno, S.; Hara, K. // AIP Conference Proceedings;Nov2012, Vol. 1496 Issue 1, p147 

    Due to the continuous reduction of the critical dimensions of semiconductor devices, it becomes very important to know the two dimensional (2D) doping profile for improving device performance. Scanning spreading resistance microscopy (SSRM) performed in high vacuum is a powerful technique for...

  • Design and Construction of Low Temperature Attachment for Commercial AFM. Pathan, Abrarkhan M.; Agrawal, Dhawal H.; Bhatt, Pina M.; Patel, Hitarthi H.; Joshi, U. S. // Solid State Phenomena;2014, Vol. 209, p137 

    With the rapid advancements in the field of nanoscience and nanotechnology, scanning probe microscopy has become an integral part of a typical R&D lab. Atomic force microscope (AFM) has become a familiar name in this category. The AFM measures the forces acting between a fine tip and a sample....

  • Mechanism of device operation in SWNT-network FET studied via scanning gate microscopy. Aoki, Nobuyuki; Yahagi, Tatsurou; Maeda, Kenji; Ochiai, Yuichi // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p829 

    A field effect transistor (FET) whose channel is composed of a network of single wall carbon nanotubes (SWNT) has been studied via scanning gate microscopy (SGM). The SGM is a unique technique using an atomic force microscope tip as a movable-point-gate electrode. It is confirmed that the SGM...

  • Electric force microscopy of semiconductors: Theory of cantilever frequency fluctuations and noncontact friction. Lekkala, Swapna; Marohn, John A.; Loring, Roger F. // Journal of Chemical Physics;Nov2013, Vol. 139 Issue 18, p184702 

    An electric force microscope employs a charged atomic force microscope probe in vacuum to measure fluctuating electric forces above the sample surface generated by dynamics of molecules and charge carriers. We present a theoretical description of two observables in electric force microscopy of a...

  • A versatile stable scanning proximal probe microscope. Jahncke, C.L.; Hallen, H.D. // Review of Scientific Instruments;Apr97, Vol. 68 Issue 4, p1759 

    Presents a novel scanning proximal probe microscope design utilizing a piezoelectric driven coarse positioning mechanism in x, y and z while maintaining relatively small lateral dimensions. Design and principle of operation of the instrument; Coarse positioning; Mechanism used for generating...

  • High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope. Marek, J.; Elliot, A. G.; Wilke, V.; Geiss, R. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1732 

    Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain...

  • Scanning probe microscope users demand everything they...  // R&D Magazine;Mar96, Vol. 38 Issue 4, p42 

    Reports that scanning probe microscope (SMP) users, demands reproducibility, accuracy and resolution. Use of SMP; Most common mode for operating SPMs; Performance of SPM.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics