TITLE

Lithium–fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

AUTHOR(S)
Zhu, Furong; Low, Beeling; Zhang, Keran; Chua, Soojin
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm[sup 2], the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m[sup 2] and 7 cd/A. These values were 1170 cd/m[sup 2] and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement. © 2001 American Institute of Physics.
ACCESSION #
5017188

 

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