Quantitative carrier profiling in ion-implanted 6H–SiC

Giannazzo, Filippo; Calcagno, Lucia; Raineri, Vito; Ciampolini, Lorenzo; Ciappa, Mauro; Napolitani, Enrico
August 2001
Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1211
Academic Journal
Dopant profiles in n-type 6H–SiC samples implanted with N[sup +] ions have been measured by scanning capacitance microscopy on cross-sectioned samples. The obtained carrier profiles have been accurately quantified by calculating a complete set of capacitance-to-voltage curves by simulation of the measurement setup, followed by the extraction of the system response characteristic as a function of the local carrier concentration. The discrepancy observed to occur between the scanning capacitance microscopy data and the corresponding secondary ions mass spectroscopy profiles is explained by the fact that the scanning capacitance microscopy is sensitive on the local concentration of free carriers, which is on the local concentration of electrically activated dopant ions. © 2001 American Institute of Physics.


Related Articles

  • Ramification of micropipes in SiC crystals. Gutkin, M. Yu.; Sheinerman, A. G.; Argunova, T. S.; Je, J. H.; Kang, H. S.; Hwu, Y.; Tsai, W.-L. // Journal of Applied Physics;7/15/2002, Vol. 92 Issue 2, p889 

    The ramification of micropipes is observed using scanning electron microscopy, optical microscopy, and synchrotron x-ray radiography. The conditions for the ramification of dislocated micropipes are determined theoretically within a model when the angles between dislocation lines are small. It...

  • Discovery of the Earliest Synthetic Carborundum (SiC) in Neolithic Jade Artifacts in Eastern China. Su-Jung Chou; Jing-Guo Zhang; Yun-Ao He; Ying-San Liou; Yang-Fang Chen; Han-Yu Shih; Lee, James K. W.; Burr, George S.; Way-Fan Lien; Mao-Hua Teng; Ching-Hua Lo // Terrestrial, Atmospheric & Oceanic Sciences;Aug2014, Vol. 25 Issue 4, p537 

    Using Raman microscopy and scanning electron microscopy we have successfully identified, for the first time, synthetic silicon carbide (carborundum) particles in 15 unearthed relics and assorted remains from five out of six Neolithic sites (~4000 - 7000 years b.p.) in Eastern China. Because of...

  • Evidence of electrical activity of extended defects in 3C–SiC grown on Si. Song, X.; Michaud, J. F.; Cayrel, F.; Zielinski, M.; Portail, M.; Chassagne, T.; Collard, E.; Alquier, D. // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142104 

    In this paper, we demonstrate the high electrical activity of extended defects found in 3C–SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading...

  • Bulk synthesis of carbon-filled silicon carbide nanotubes with a narrow diameter distribution. Borowiak-Palen, E.; Ruemmeli, M. H.; Gemming, T.; Knupfer, M.; Biedermann, K.; Leonhardt, A.; Pichler, T.; Kalenczuk, R. J. // Journal of Applied Physics;3/1/2005, Vol. 97 Issue 5, p056102 

    We report on a simple and low-cost route to produce SiC nanotubes without the need for the more usual oxide based reactions using a high temperature substitution reaction between multiwall carbon nanotubes as a frame and Si powder. Local scale studies using transmission and scanning electron...

  • Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. Tomita, Takuro; Kumai, Ryota; Matsuo, Shigeki; Hashimoto, Shuichi; Yamaguchi, Makoto // Applied Physics A: Materials Science & Processing;Nov2009, Vol. 97 Issue 2, p271 

    The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The...

  • Nanosilicon carbide/hydroxyapatite nanocomposites: structural, mechanical and in vitro cellular properties. Hesaraki, Saeed; Ebadzadeh, Touraj; Ahmadzadeh-Asl, Shaghayegh // Journal of Materials Science: Materials in Medicine;Jul2010, Vol. 21 Issue 7, p2141 

    In this study, bioceramic nanocomposites were synthesized by sintering compacted bodies of hydroxyapatite (HA) mixed with 5 or 15 wt% nanosilicon carbide at 1100 or 1200°C in a reducing atmosphere. Pure hydroxyapatite was also prepared for comparison. Phase compositions, structural and...

  • Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates. Katona, T. M.; Craven, M. D.; Fini, P. T.; Speck, J. S.; DenBaars, S. P. // Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2907 

    We have characterized the growth of GaN on both SiC and Si (111) using the cantilever epitaxy technique. Cantilever epitaxy employs growth from periodic, parallel mesas which are formed by etching the substrate [C.I.H. Ashby et al. Appl. Phys. Lett. 77, 3233 (2000)]. GaN/AlN/Si and GaN/AlN/SiC...

  • STUDY ON PERFORMANCE BEHAVIOUR OF PCD GRADES ON MACHINING A356 ALLOY CONTAINING 10% REINFORCEMENT OF SIC PARTICLES. Krishnan, N. Muthu; Kaarmuhilan, K.; Karthika, S. // Journal on Future Engineering & Technology;Aug-Oct2011, Vol. 7 Issue 1, p42 

    Aluminum silicon carbide Metal Matrix Composites (Al-MMC) are widely used in aeronautical and automobile industries due to their excellent mechanical and physical properties. However the harder reinforcement particles make machining difficult. Tool wear occurs more quickly and reduces the life...

  • EFFECT OF A NOVEL Al-SiC GRAIN REFINER ON THE MICROSTRUCTURE AND PROPERTIES OF AZ91E MAGNESIUM ALLOY. Azad, A.; Bichler, L.; Elsayed, A. // International Journal of Metalcasting;2013, Vol. 7 Issue 4, p49 

    Spark Plasma Sintering (SPS) process was used to fabricate a novel Al-SiC master alloy for AZ91E magnesium alloys. The master alloy enabled homogeneous distribution of SiC particles in the alloy matrix. With an addition of 0.1 wt.% Al-SiC master alloy, the mean grain size decreased by 15 %. It...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics