Long range resonant tunneling in quantum cascade structures

Buffaz, A.; Carras, M.; Doyennette, L.; Trinité, V.; Marcadet, X.; Berger, V.
April 2010
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162103
Academic Journal
Tunneling transport in a quantum cascade detector is investigated. With regard to coherent transport in quantum cascade lasers, a Kazarinov–Suris approach R. F. Kazarinov and R. A. Suris, [Sov. Phys. Semicond. 6, 120 (1972)] needs to be modified through the introduction of an additional Fermi–Dirac factor in order to properly model the experimental data at low temperature. Electronic current is completely dominated by tunneling transport; the model here presented should help to suppress it in the future design of efficient quantum cascade detectors.


Related Articles

  • Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure. Reddy, C. V.; Reddy, C.V.; Narayanamurti, V.; Ryou, J. H.; Ryou, J.H.; Chowdhury, U.; Dupuis, R. D.; Dupuis, R.D. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    A direct spectroscopic signature associated with the quantized state of the charge carriers in three-dimensionally confined InP quantum dots (QDs) is reported using a ballistic electron emission microscopy (BEEM)/spectroscopy technique. The self-assembled InP QDs are sandwiched in an AlInP...

  • The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures. Lin, Xi; Hu, Jingshi; Lai, Andrew P.; Zhang, Zhenning; MacLean, Kenneth; Dillard, Colin; Xie, Ya-Hong; Kastner, Marc A. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p023712 

    Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive...

  • Fermi edge singularity in II–VI semiconductor resonant tunneling structures. Rüth, M.; Slobodskyy, T.; Gould, C.; Schmidt, G.; Molenkamp, L. W. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182104 

    We report on the observation of Fermi edge enhanced resonant tunneling transport in a II–VI semiconductor heterostructure. The resonant transport through a self-assembled CdSe quantum dot survives up to 45 K and probes a disordered two-dimensional-like emitter, which dominates the...

  • The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots. Shkolnik, A. S.; Savelyev, A. V.; Karachinsky, L. Ya.; Gordeev, N. Yu.; Seisyan, R. P.; Zegrya, G. G.; Pellegrini, S.; Buller, G. S.; Evtikhiev, V. P. // Semiconductors;Mar2008, Vol. 42 Issue 3, p291 

    The results of time-resolved photoluminescence studies of heterostructures containing monolayer arrays of InAs/GaAs quantum dots are presented. A two-component time dependence of intensity of photoluminescence from the ground state of quantum dots, with characteristic times of the slow component...

  • Negative differential resistance in conductive polymer and semiconducting quantum dot nanocomposite systems. Biswas, S.; Dutta, M.; Stroscio, M. A. // Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p182102 

    We report the room temperature negative differential resistance (NDR) phenomenon in nanocomposite heterostructures made of semiconducting quantum dots embedded in conductive polymers. The peak to valley ratio of the current is 91 at room temperature which increases to 2965 at 77 K. The current...

  • Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures. Podevin, F.; Vanbésien, O.; Lippens, D. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6247 

    Quantum calculations of the current-voltage characteristics of metal/wide-gap/narrow-gap semiconductor heterostructures have been performed in order to analyze the pure tunneling and thermally assisted current contributions. The InAlAs/InGaAs material system lattice matched to an InP substrate,...

  • Nanodevice for High Precision Readout of Electron Spin. Szumniak, P.; Bednarek, S.; Szafran, B.; Grynkiewicz, P. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p651 

    In this paper we propose and simulate operation of a nanodevice, which enables the electron spin accumulation and very precise read-out of its final value. We exploit the dependence of the electron trajectory on its spin state due to the spin-orbit coupling in order to distinguish between...

  • Franck–Condon blockade in suspended carbon nanotube quantum dots. Leturcq, Renaud; Stampfer, Christoph; Inderbitzin, Kevin; Durrer, Lukas; Hierold, Christofer; Mariani, Eros; Schultz, Maximilian G.; von Oppen, Felix; Ensslin, Klaus // Nature Physics;May2009, Vol. 5 Issue 5, p327 

    Understanding the influence of vibrational motion of the atoms on electronic transitions in molecules constitutes a cornerstone of quantum physics, as epitomized by the Franck–Condon principle of spectroscopy. Recent advances in building molecular-electronics devices and...

  • Tunneling transport through multi-quantum-dot with Majorana bound states. Li, Yu-Xian; Bai, Zhi-Ming // Journal of Applied Physics;Jul2013, Vol. 114 Issue 3, p033703 

    We have studied tunneling transport properties through multi-quantum-dot coupled to Majorana bound states (MBSs), in which only one quantum dot is connected with two normal leads. When the MBSs are sandwiched between two quantum dots (dot-MBSs-dot), the signature of Majorana fermions; namely,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics