Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Yamane, K.; Hamaya, K.; Ando, Y.; Enomoto, Y.; Yamamoto, K.; Sadoh, T.; Miyao, M.
April 2010
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162104
Academic Journal
We study electrical properties of metal/Ge contacts with an atomically controlled interface, and compare them with those with a disordered one, where atomically controlled interfaces can be demonstrated by using Fe3Si/Ge(111) contacts. We find that the Schottky barrier height of Fe3Si/n-Ge(111) contacts is unexpectedly lower than those induced by the strong Fermi-level pinning at other metal/n-Ge contacts. For Fe3Si/p-Ge(111) contacts, we identify clear rectifying behavior in I-V characteristics at low temperatures, which is also different from I-V features due to the strong Fermi-level pinning at other metal/p-Ge contacts. These results indicate that there is an extrinsic contribution such as dangling bonds to the Fermi-level pinning effect at the directly connected metal/Ge contacts.


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