TITLE

Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers

AUTHOR(S)
Tung-Ming Pan; Ji-Shing Jung; Xin-Chang Wu
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we proposed a metal-oxide-high-k-oxide-silicon-type (MOHOS) memory structure incorporating a high-k Yb2TiO5 charge trapping layer and the subsequent postdeposition annealing treatment. The effect of postdeposition annealing on the structural properties of Yb2TiO5 charge trapping layers was explored by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. The Yb2TiO5 MOHOS-type device annealed at 800 °C exhibited a larger memory window of 2.8 V and a smaller charge loss of 10% than did those prepared at other annealing temperatures. This outcome is attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Yb2TiO5 structure and a thin low-k interfacial layer.
ACCESSION #
49807533

 

Related Articles

  • Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride. Yanli Pei; Nishijima, Masahiko; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113115 

    In this letter, tungsten nanodots (W-NDs) in silicon nitride formed by a self-assembled nanodot deposition method have been investigated as a floating gate of nonvolatile memory (NVM). Observations from transmission electron microscopy and x-ray diffraction pattern clearly confirm the formation...

  • Control of Interface Traps in HfO Gate Dielectric on Silicon. Tan, S. // Journal of Electronic Materials;Nov2010, Vol. 39 Issue 11, p2435 

    The effects of postdeposition annealing (PDA) on the interface between HfO high- k dielectric and bulk silicon were studied in detail. The key challenges of successfully adopting the high- k dielectric/Si gate stack into advanced complementary metal-oxide-semiconductor (CMOS) technology are...

  • A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures. Lebedev, A. A.; Zamoryanskaya, M. V.; Davydov, S. Yu.; Kirilenko, D. A.; Lebedev, S. P.; Sorokin, L. M.; Shustov, D. B.; Shcheglov, M. P. // Materials Science Forum;2014, Vol. 778-780, p247 

    Transmission electron microscopy and the cathodoluminescence method have been used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers, with possible inclusion of other silicon carbide...

  • Catalytic oxidation of (001)Si in the presence of Cu3Si at room temperature. Liu, C. S.; Chen, L. J. // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3611 

    Presents a study that investigated room temperature oxidation of (001)silicon catalyzed by Cu[sub 3]Si by transmission electron microscopy and x-ray diffractometry. Copper as an alternative to aluminum alloys; Description of the silicon used in the study; Preparation and examination of...

  • Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge.... Bugiel, E.; Zaumseil, P. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2051 

    Describes the combination of standard x-ray diffraction and transmission electron microscopy measurements for pseudomorphically grown silicon-germanium (Si-Ge) layers on silicon. Relaxation and composition of Si-Ge layers; Determination of the lattice constant variations of the netplanes;...

  • On the strain in n-type GaN. Xie, Jinqiao; Mita, Seiji; Hussey, Lindsay; Rice, Anthony; Tweedie, James; LeBeau, James; Collazo, Ramón; Sitar, Zlatko // Applied Physics Letters;10/3/2011, Vol. 99 Issue 14, p141916 

    It was demonstrated that Ge has the same effect as Si on the strain evolution in n-type GaN as measured by x-ray diffraction. Dislocation inclination, which causes tensile strain in n-type GaN, was clearly observed by transmission electron microscopy where Ge doping was introduced during...

  • Specific surface effect on transport properties of NiO/MgO heterostructured nanowires. Oka, Keisuke; Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Seki, Shu; Honsho, Yoshihito; Ishimaru, Manabu; Hirata, Akihiko; Kawai, Tomoji // Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133110 

    NiO heterostructured nanowires are promising building blocks due to the nonvolatile resistive switching in nanoscale. Here, we report on the noncontact transport measurements of single crystalline NiO/MgO heterostructured nanowires by utilizing a microwave conductivity method. We found the...

  • Pseudo-capacitance properties of porous metal oxide nanoplatelets derived from hydrotalcite-like compounds. Jun Wang; Hao Qin; Jia You; Zhanshuang Li; Piaoping Yang; Xiaoyan Jing; Milin Zhang; Zhaohua Jiang // Journal of Applied Electrochemistry;Oct2009, Vol. 39 Issue 10, p1803 

    Nanoplatelets of metal oxides with interesting porous structure were obtained by thermal treatment of Ni/Al hydrotalcite. Structural and surface properties of the porous oxides were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM and HRTEM), and N2...

  • Effect of hydrothermal duration on synthesis of WO nanorods. Hassani, Hamid; Marzbanrad, Ehsan; Zamani, Cyrus; Raissi, Babak // Journal of Materials Science: Materials in Electronics;Sep2011, Vol. 22 Issue 9, p1264 

    Among different type of transition metal oxides, tungsten trioxide (WO) is a suitable candidate for electronic device fabrication due to its n-type property and wide band gap. Herein, one-dimensional tungsten trioxide (WO) nanorods were achieved from an aqueous solution of sodium tungstate...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics