Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers

Tung-Ming Pan; Ji-Shing Jung; Xin-Chang Wu
April 2010
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162901
Academic Journal
In this letter, we proposed a metal-oxide-high-k-oxide-silicon-type (MOHOS) memory structure incorporating a high-k Yb2TiO5 charge trapping layer and the subsequent postdeposition annealing treatment. The effect of postdeposition annealing on the structural properties of Yb2TiO5 charge trapping layers was explored by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. The Yb2TiO5 MOHOS-type device annealed at 800 °C exhibited a larger memory window of 2.8 V and a smaller charge loss of 10% than did those prepared at other annealing temperatures. This outcome is attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Yb2TiO5 structure and a thin low-k interfacial layer.


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