Thermoelectric properties of polycrystalline In4Se3 and In4Te3

Xun Shi; Cho, Jung Y.; Salvador, James R.; Jihui Yang; Hsin Wang
April 2010
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162108
Academic Journal
High thermoelectric performance of a single crystal layered compound In4Se3 was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In4Se3 and In4Te3. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In4Se3 and In4Te3 are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In4Se3.


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