TITLE

A magnetoelectric memory cell with coercivity state as writing data bit

AUTHOR(S)
Zheng Li; Jing Wang; Yuanhua Lin; Nan, C. W.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field Hc states (i.e., low-Hc and high-Hc) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93Ge0.07 film grown on fully poled ferroelectric BiScO3-PbTiO3 substrate, exhibiting a large electric-field modulation of Hc, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field Hc information written by electric fields is demonstrated by using magnetoresistance read head.
ACCESSION #
49807519

 

Related Articles

  • Vilnius High Magnetic Field Centre Facilities. Novickij, J.; Balevicius, S.; �urauskiene, N.; Kacianauskas, R.; Stankevic, V.; �imkevicius, C.; Ker�ulis, S.; Bartkevicius, S. // Journal of Low Temperature Physics;Apr2010, Vol. 159 Issue 1/2, p406 

    A brief overview of the high-field facilities at the Vilnius High Magnetic Field Centre (VMC) is presented in this paper. We highlight the main activity of the VMC, which lies in studying the effects of pulsed magnetic and electrical fields on material properties, and give a short description of...

  • The threshold electric field of 180° domain switching in the misfit strain-external electric field phase diagram. Zhu, Z.; Zheng, X. J.; Jiang, D. D.; Yang, Z. C. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p034305 

    The single domain treatment on the selected single grain was performed by the negative DC bias in order to obtain the single-domain state, and the opposite color contrasts within the selected grain in piezoelectric phase images of Pb(Zr0.52Ti0.48)O3 ferroelectric thin film were observed by...

  • Losses in Coated Conductors Under Nonsinusoidal Currents and Magnetic Fields. Furman, G.; Spektor, M.; Meerovich, V.; Sokolovsky, V. // Journal of Superconductivity & Novel Magnetism;Feb2011, Vol. 24 Issue 1/2, p1045 

    The study of AC losses in superconducting wires and tapes is usually restricted by consideration of applied sinusoidal currents and/or magnetic fields. However, currents in electric power systems contain a wide variety of harmonics. The currents become strongly nonsinusoidal in the operation of...

  • Focus Section: Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films. Petrov, Peter Kr.; Palkar, Vaijayanti R.; Tagantsev, Alexander K.; Hsin-I Chien; Prashanthi, K.; Axelsson, Anna-Karin; Bhattacharya, S.; McN Alford, Neil // Journal of Materials Research;Aug2007, Vol. 22 Issue 8, p16 

    The dielectric response of La- and Dy- doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, direct current (dc) electric field, and magnetic field in a temperature range from 25 to 300 °C. Both the real and imaginary parts of the...

  • Terahertz amplification in delta-doped germanium films with in-plane transport. Dolguikh, M. V.; Muravjov, A. V.; Peale, R. E. // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p093106 

    Amplification of terahertz radiation on intersubband transitions has been analyzed by numerical Monte Carlo simulation for p-type delta-doped Ge films with in-plane transport configuration of applied electric and magnetic fields. A significant increase of the gain is found, compared to existing...

  • Spin-transfer-induced precessional magnetization reversal. Kent, A.D.; Özyilmaz, B.; del Barco, E. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3897 

    A magnetoelectronic device is proposed in which a spin-current pulse produces a rapid reversal of the magnetization of a thin film nanomagnet. A spin-transfer torque induces the reversal and the switching speed is determined by the precession frequency of the magnetization in a thin film...

  • Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films. Marti, X.; Fina, I.; Skumryev, V.; Ferrater, C.; Varela, M.; Fábrega, L.; Sánchez, F.; Fontcuberta, J. // Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p142903 

    Orthorhombic YMnO3 epitaxial thin films were grown on Nb(0.5%)-doped SrTiO3(001) substrates. Film’s thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more...

  • Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification. Sürgers, C.; Potzger, K.; Strache, T.; Möller, W.; Fischer, G.; Joshi, N.; v. Löhneysen, H. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062503 

    Ferromagnetic Mn5Si3C0.8 and Mn5Ge3C0.8 films with Curie temperatures TC well above room temperature are obtained by 12C+-ion implantation in antiferromagnetic Mn5Si3 or ferromagnetic Mn5Ge3. Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral...

  • Magnetoelectric properties of Ni/PZT/Ni layered composite for low field applications. Babu, S. Narendra; Siddeshwar, A.; Srinivas, K.; Suryanarayana, S. V.; Bhimasankaram, T. // Journal of Materials Science;Aug2009, Vol. 44 Issue 15, p3948 

    A composite material when placed under the external magnetic/electric fields exhibits voltage/induced magnetization is known as magnetoelectric (ME) composite. Such composite materials should have ferroelectric and ferro/ferri magnetic phases as constituents. The magnetoelectric output is...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics