TITLE

Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy

AUTHOR(S)
Tanimura, T.; Toyoda, S.; Kamada, H.; Kumigashira, H.; Oshima, M.; Sukegawa, T.; Liu, G. L.; Liu, Z.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated photoinduced charge-trapping phenomena in metal/high-k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.
ACCESSION #
49807518

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics