Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Gun Hee Kim; Woong Hee Jeong; Byung Du Ahn; Hyun Soo Shin; Hee Jin Kim; Hyun Jae Kim; Myung-Kwan Ryu; Kyung-Bae Park; Jong-Baek Seon; Sang-Yoon Lee
April 2010
Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p163506
Academic Journal
We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.


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