Ferroelectric switching mechanism in SrBi[sub 2]Ta[sub 2]O[sub 9]

Ding, Y.; Liu, J. S.; MacLaren, I.; Wang, Y. N.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
The ferroelectric switching mechanism in strontium bismuth tantalate [SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT)] has been studied using in situ transmission electron microscopy observations of the nucleation and growth of polarization domains, such as 180° and 90° domains. Thank to this high density of the antiphase boundary (APB), a switching mechanism in SBT based on the nucleation of new polarization domains at APBs as well as the electrode interfaces put forward and the fatigue-free behavior of SBT with a platinum electrode is explained. © 2001 American Institute of Physics.


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