Strain effect in large silicon nanocrystal quantum dots

Thean, A.; Leburton, J. P.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
We present a computer simulation of strain effects on the electronic spectrum of 100 Å diam Si nanocrystal (nc-Si) quantum dots embedded in SiO[sub 2], based on the continuum strain model and deformation potential theory. We show that the coupling between the nc-Si geometry and the symmetry generated by the strain potential can enhance confinement in the quantum dot and can lift the degeneracy of the conduction band valleys for nonspherically symmetric nanocrystals. © 2001 American Institute of Physics.


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