TITLE

Strain effect in large silicon nanocrystal quantum dots

AUTHOR(S)
Thean, A.; Leburton, J. P.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a computer simulation of strain effects on the electronic spectrum of 100 Å diam Si nanocrystal (nc-Si) quantum dots embedded in SiO[sub 2], based on the continuum strain model and deformation potential theory. We show that the coupling between the nc-Si geometry and the symmetry generated by the strain potential can enhance confinement in the quantum dot and can lift the degeneracy of the conduction band valleys for nonspherically symmetric nanocrystals. © 2001 American Institute of Physics.
ACCESSION #
4972069

 

Related Articles

  • Strain-induced quantum confinement of electron gases: The observation of quantum dot levels. Stallard, W. G.; Plaut, A. S.; Thoms, S.; Holland, M. C.; Beaumont, S. P.; Stanley, C. R.; Hopkinson, M. // Applied Physics Letters;9/28/1998, Vol. 73 Issue 13 

    Zero-dimensional electron gases (0DEGs) have been fabricated by the strain patterning of a GaAs/AlAs heterojunction using amorphous carbon stressors. We have observed radiative recombination of electrons with both acceptor-bound and strain-confined holes. For our smallest 0DEGs, quantum dot...

  • Inhomogeneous strain in individual quantum dots probed by transport measurements. Akyu¨z, C. D.; Zaslavsky, A.; Freund, L. B.; Syphers, D. A.; Sedgwick, T. O. // Applied Physics Letters;4/6/1998, Vol. 72 Issue 14 

    Resonant tunneling measurements are used to probe the inhomogeneous strain in individual SiGe quantum dots. Current–voltage characteristics of strained Si/SiGe resonant tunneling diodes of diameter D≤0.25 μm exhibit additional fine quasi-periodic structure in the resonant peaks....

  • Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution.... Dong Pan; Zeng, Y.P. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2440 

    Demonstrates the formation of dislocation-free indium gallium arsenide/gallium arsenide quantum dot superlattice. Examination of the strain distribution and relaxation process in the capped superlattice; Uniformity of strain distribution; Occurrence of strains at interfaces between superlattice...

  • Effect of mechanical strain on electrical characteristics of hydrogenated amorphous silicon junctions. Utsunomiya, Michito; Yoshida, Akira // Journal of Applied Physics;7/1/1989, Vol. 66 Issue 1, p308 

    Presents a study which investigated the effect of mechanical strain on the current-voltage characteristics of hydrogenated amorphous silicon p-i-n junctions. Relation between the strain effect and the voltage dependence of the sensitivity; Effect of strain on the distribution of localized...

  • Si band-gap shrinkage caused by local strain at Si/SiO[sub 2] edge. Takeuchi, Kan; Aoki, Masakazu // Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2566 

    Examines the silicon (Si) band-gap shrinkage following a local strain at Si/silicon dioxide (SiO[sub 2]) edge. Influence of band-gap shrinkage on Si devices characteristics; Impact of offset nitride on Si/SiO[sub 2] edge; Effectiveness of rapid thermal annealing in decreasing strain in the...

  • Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands. Kim, E.S.; Usami, N. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p295 

    Evaluates the strain effects induced by self-assembled germanium islands grown on strained silicon-germanium/silicon quantum wells. Advantages in studying quantum wires and dots in multi-dimensional quantum confinement structures; Improvement of the temperature stability of semiconductor...

  • Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer. Suzuki, Ryoichiro; Miyamoto, Tomoyuki; Sengoku, Tomoyuki; Koyama, Fumio // Applied Physics Letters;4/7/2008, Vol. 92 Issue 14, p141110 

    Emission and shape characteristics of the InGaAs covered InAs quantum dots with GaNAs strain compensation layers (SCLs) are investigated, focusing on the reduction of the spacer thickness for device applications. Using the GaNAs SCL, the suppression of inhomogeneous emission broadening induced...

  • Strain study of self-assembled InAs quantum dots by ion channeling technique. Wang, Hsing-Yeh; Lee, Chien-Ping; Niu, H.; Chen, C. H.; Wu, S.-C. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103502 

    Ion channeling technique using MeV C++ ions was used to study strain in self-assembled InAs quantum dots (QDs) buried in GaAs matrix. Because of the use of heavy ions, we were able to observe an angular shift in the angular scan of the In signal relative to that of the Ga/As signal. This...

  • Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy. Kapteyn, C. M. A.; Kapteyn, C.M.A.; Lion, M.; Heitz, R.; Bimberg, D.; Miesner, C.; Asperger, T.; Brunner, K.; Abstreiter, G. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Hole emission from self-organized Ge quantum dots with a diameter of ∼70 nm in a Si matrix is investigated by time-resolved capacitance spectroscopy [deep level transient spectroscopy (DLTS)]. A complex DLTS signal is observed and explained in terms of thermally activated emission from...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics