Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories

Shannigrahi, S. R.; Jang, Hyun M.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P[sub r]) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 °C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5×10[sup 10] switching cycles, a quite stable charge retention profile with time, and comparatively high P[sub r] values, all of which assure their suitability for practical FRAM applications. © 2001 American Institute of Physics.


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