TITLE

Ultrabroadband photoconductive detection: Comparison with free-space electro-optic sampling

AUTHOR(S)
Kono, Shunsuke; Tani, Masahiko; Sakai, Kiyomi
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spectral response of a low-temperature-grown GaAs photoconductive (PC) antenna is compared with that of the electro-optic sampling technique for the frequency region up to 40 THz. The spectral response of the PC antenna for broadband detection is found to be determined by the temporal profile of the number of photocarriers injected by ultrashort optical gate pulses. © 2001 American Institute of Physics.
ACCESSION #
4972055

 

Related Articles

  • New self-electro-optic effect device using two wavelengths in InGaAs/AlGaAs multiple quantum wells. Giugni, Stephen; Kawashima, Kenji // Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p376 

    Evaluates a self-electrooptic effect device in an indium gallium arsenide/aluminum gallium arsenide multiple quantum well diode structure. Exhibition of optical transmission bistability; Separation of the wavelengths; Enhancement of the possibility of system integration.

  • GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm. Wang, S. Y.; Lin, S. H.; Houng, Y. M. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p83 

    We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode...

  • GaAs, AlAs, and AlxGa1-xAs[ATOTHER]@B:[/ATOTHER] Material parameters for use in research and device applications. Adachi, Sadao // Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, pR1 

    Discusses a study on aluminum-gallium-arsenic/gallium arsenide heterostructure system as material parameters for electro-optic device applications. Material parameters of aluminum-gallium-arsenic alloy based on the interpolation scheme Acceptability of such interpolated parameters from an...

  • Electro-optic imaging of the internal fields in a GaAs photoconductive switch. Donaldson, W. R.; Kingsley, L.; Weiner, M.; Kim, A.; Zeto, R. // Journal of Applied Physics;12/15/1990, Vol. 68 Issue 12, p6453 

    Presents a study that observed an electro-optic imaging of the internal fields in a gallium arsenide photoconductive switch. Applications of electro-optic sampling; Details on the optical imaging system; Discussion on the results of the study.

  • Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs. Kuchta, D.; Whinnery, J. R.; Smith, J. S.; Woodall, J. M.; Pettit, D. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1534 

    High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is...

  • Buffer Layer Effects on Tandem InGaAs TPV Devices. Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.; Jenkins, Phillip P.; Wernsman, Bernard; Schultz, Robert W. // AIP Conference Proceedings;2004, Vol. 738 Issue 1, p453 

    Tandem thermophotovoltaic (TPV) cells have the potential to demonstrate efficiencies exceeding those of single junction devices. Fabricating TPV tandem devices utilizing indium gallium arsenide (InGaAs) for all of the component cells in a two cell tandem necessitates the inclusion of an...

  • Tapered photoconductive terahertz field probe tip with subwavelength spatial resolution. Wächter, Markus; Nagel, Michael; Kurz, Heinrich // Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041112 

    In this work a photoconductive probe tip applicable for near- and far-field measurements in the terahertz frequency regime is demonstrated as a powerful alternative to existing terahertz scanning near-field optical microscopy approaches. The probe tip is based on a triangular-shaped patch of...

  • Intense terahertz generation at low frequencies using an interdigitated ZnSe large aperture photoconductive antenna. Ropagnol, X.; Blanchard, F.; Ozaki, T.; Reid, M. // Applied Physics Letters;10/14/2013, Vol. 103 Issue 16, p161108 

    We demonstrate the generation of intense THz pulses at low frequencies, and THz pulse shaping, using a ZnSe interdigitated large aperture photoconductive antenna. We have experimentally measured a THz pulse energy of 3.6 ±0.8 μJ, corresponding to a calculated peak THz electric field of 143...

  • InGaAsP/InGaAs Tandem TPV Device. Siergiej, Richard R.; Sinharoy, Samar; Valko, Thomas; Wehrer, Rebecca J.; Wernsman, Bernard; Link, Samuel D.; Schultz, Robert W.; Messham, Rowan. L. // AIP Conference Proceedings;2004, Vol. 738 Issue 1, p480 

    Power conversion in a thermophotovoltaic (TPV) system can be accomplished with single p-n junctions which are interconnected on-wafer (monolithic interconnected module (MIM) approach) or off-wafer (individual chip module approach) to form large area arrays. Using a MIM architecture, 0.6 eV...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics