Reactive ion etching of silicon carbide in SF[sub 6] gas: Detection of CF, CF[sub 2], and SiF[sub 2] etch products

Chabert, P.; Cunge, G.; Booth, J.-P.; Perrin, J.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
We have detected by laser-induced fluorescence the radicals SiF[sub 2], CF, and CF[sub 2] produced during the reactive ion etching of SiC substrates in a pure SF[sub 6] plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF[sub 2] are produced directly at the etched surface, the SiF[sub 2] radicals are produced in the gas phase (probably by electron-impact dissociation of SiF[sub 4]). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CF[sub x] (x=1,2,3) radicals. The CF[sub 2] radical represents up to 20% of the total carbon etch products under our conditions. © 2001 American Institute of Physics.


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