TITLE

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

AUTHOR(S)
Zhang, J.; Kuokstis, E.; Fareed, Q. ; Wang, H.; Yang, J. ; Simin, G.; Asif Khan, M. ; Gaska, R.; Shur, M.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report on a material deposition scheme for quaternary Al[sub x]In[sub y]Ga[sub 1-x–y]N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C. © 2001 American Institute of Physics.
ACCESSION #
4972046

 

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