TITLE

Influence of microstructure on electrical properties of diluted GaN[sub x]As[sub 1-x] formed by nitrogen implantation

AUTHOR(S)
Jasinski, J.; Yu, K. M.; Walukiewicz, W.; Washburn, J.; Liliental-Weber, Z.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.
ACCESSION #
4972044

 

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