Influence of microstructure on electrical properties of diluted GaN[sub x]As[sub 1-x] formed by nitrogen implantation

Jasinski, J.; Yu, K. M.; Walukiewicz, W.; Washburn, J.; Liliental-Weber, Z.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.


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