TITLE

Green luminescent center in undoped zinc oxide films deposited on silicon substrates

AUTHOR(S)
Lin, Bixia; Fu, Zhuxi; Jia, Yunbo
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the I–V properties of the ZnO/Si heterojunctions were investigated at different annealing temperatures and atmospheres. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. It is concluded that the green emission corresponds to the local level composed by oxide antisite defect O[sub Zn] rather than oxygen vacancy V[sub O], zinc vacancy V[sub Zn], interstitial zinc Zn[sub i], and interstitial oxygen O[sub i]. © 2001 American Institute of Physics.
ACCESSION #
4972039

 

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