TITLE

Photoluminescence properties of a GaN[sub 0.015]As[sub 0.985]/GaAs single quantum well under short pulse excitation

AUTHOR(S)
Luo, X. D.; Xu, Z. Y.; Ge, W. K.; Pan, Z.; Li, L. H.; Lin, Y. W.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (PL) emission from GaNAs/GaAs single quantum wells (QWs). It dominates the PL spectra under high excitation and/or at high temperature. By measuring the PL dependence on both temperature and excitation power and by analyzing the time-resolved PL results, we have attributed the PL peak to the recombination of delocalized excitons in QWs. Furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent PL spectra under the short pulse excitation. This competition is believed to be responsible for the temperature-induced S-shaped PL shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. © 2001 American Institute of Physics.
ACCESSION #
4972034

 

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