Radiotracer investigation of a deep Be-related band gap state in 4H-SiC

Albrecht, F.; Grillenberger, J.; Pasold, G.; Witthuhn, W.; Achtziger, N.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
One Be-related deep level in the band gap of 4H-SiC was identified by radiotracer deep level transient spectroscopy (DLTS). The radioactive isotope [sup 7]Be was recoil implanted into p-type as well as n-type 4H-SiC for these radiotracer experiments. DLTS spectra were taken repeatedly during the elemental transmutation of [sup 7]Be to [sup 7]Li. In the case of p-type 4H-SiC, they exhibit one peak of time-dependent height. Its concentration decreases with the halflife of the nuclear decay of [sup 7]Be (T[sub 1/2]=53.3 d). Thus, this level at 1.06 eV above the valence band edge is identified as Be-related. In n-type 4H-SiC, neither Be- nor Li-correlated deep levels have been found in the investigated part of the band gap within the measurement accuracy. © 2001 American Institute of Physics.


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