TITLE

Improved n[sup +]-GaAs/p[sup +]-In[sub 0.49]Ga[sub 0.51]P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

AUTHOR(S)
Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A n[sup +]-GaAs/p[sup +]-In[sub 0.49]Ga[sub 0.51]P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm[sup 2] device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained. © 2001 American Institute of Physics.
ACCESSION #
4972031

 

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