TITLE

Characteristics of metalorganic remote plasma chemical vapor deposited Al[sub 2]O[sub 3] gate stacks on SiC metal–oxide–semiconductor devices

AUTHOR(S)
Lazar, H. R.; Misra, V.; Johnson, R. S.; Lucovsky, G.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metalorganic remote plasma chemical vapor deposited SiO[sub 2]/Al[sub 2]O[sub 3] stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC metal–oxide–semiconductor capacitors. Capacitance–voltage (C–V) and current–voltage (I–V) measurements were performed. C–V characteristics showed excellent properties at room and higher temperatures. Samples exhibited a slight negative flatband shift from which the net oxide charge (Q[sub ox]) was calculated. Low leakage currents were observed even at high temperatures. I–V characteristics of Al[sub 2]O[sub 3] were superior to those observed on AlN and SiO[sub 2] dielectrics on SiC. © 2001 American Institute of Physics.
ACCESSION #
4972029

 

Related Articles

  • Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface SiO[sub 2] formation. Roy Chowdhuri, A.; Takoudis, C. G.; Klie, R. F.; Browning, N. D. // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4241 

    Thin films of aluminum oxide were deposited on H-passivated Si(100) substrate using trimethylaluminum and oxygen at 0.5 Torr and 300 °C. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate phase at the film-substrate...

  • Nanoscale lateral epitaxial overgrowth of GaN on Si (111). Zang, K. Y.; Wang, Y. D.; Chua, S. J.; Wang, L. S. // Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p193106 

    We demonstrate that GaN can selectively grow by metalorganic chemical vapor deposition into the pores and laterally over the nanoscale patterned SiO2 mask on a template of GaN/AlN/ Si. The nanoporous SiO2 on GaN surface with pore diameter of approximately 65 nm and pore spacing of 110 nm was...

  • Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow. Kohama, Y.; Uchida, K.; Soga, T.; Jimbo, T.; Umeno, M. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p862 

    GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double-crystal x-ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half-maximum of the (400) reflection obtained from...

  • Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic.... Kim, J.; Alwan, J.J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p28 

    Examines the chemical characterization of indium-gallium arsenide (GaAs)/aluminum GaAs strained interfaces grown by metalorganic chemical vapor deposition. Determination of the Al or In content; Causes for the asymmetry of the indium-containing systems; Use of quantitative chemical mapping.

  • A new InP-based heterojunction bipolar transistor utilizing an.... Wu, Y.H.; Su, J.S. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p347 

    Demonstrates a lattice-matched indium aluminum gallium arsenic/indium phosphide grown by low-pressure metalorganic chemical vapor deposition. Manifestation of zero conduction band and large valence band discontinuities; Resolution of the potential spike energy in a direct measurement technique;...

  • A model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Amir, N.; Fekete, D.; Nemirovsky, Y. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p871 

    Presents a study which proposed a model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Details of the calculation of the solid composition; Comparisons of the predictions of the model with measured data; Results and...

  • Metalorganic chemical vapor deposition on mesoscopic-structured substrates with closed topologies. Ishibashi, Akira; Ogawa, Masamichi; Funato, Kenji; Ugajin, Ryuichi; Mori, Yoshifumi // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2117 

    Presents a study which performed metalorganic chemical vapor deposition (MOCVD) on substances of closed topologies. Background on MOCVD; Results of the study; Conclusion.

  • Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers. Aleksiejunas, R.; Sudžius, M.; Malinauskas, T.; Vaitkus, J.; Jarašiunas, K.; Sakai, S. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1157 

    Time-resolved nondegenerate four-wave mixing experiments were performed on 2.6-μm-thick GaN epilayers grown by metalorganic chemical-vapor deposition using picosecond pulses at 355 and 1064 nm for grating recording and probing, respectively. Measurements of free carrier grating kinetics at...

  • Simulation and characterization of the selective area growth process. Alam, M.A.; People, R.; Isaacs, E.; Kim, C.Y.; Evans-Lutterodt, K.; Siegrist, T.; Pernell, T.L.; Vandenberg, J.; Sputz, S.K.; Chu, S.N.G.; Lang, D.V.; Smith, L.; Hybertsen, M.S. // Applied Physics Letters;5/3/1999, Vol. 74 Issue 18, p2617 

    Interprets the metalorganic chemical vapor deposition technique called selective area growth (SAG) using a three-dimensional vapor phase model. Profiles of thickness predicted by the model; Long range effects of the thickness composition of metals; Uses of the SAG process; Key idea behind SAG.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics