Characteristics of metalorganic remote plasma chemical vapor deposited Al[sub 2]O[sub 3] gate stacks on SiC metal–oxide–semiconductor devices

Lazar, H. R.; Misra, V.; Johnson, R. S.; Lucovsky, G.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
Metalorganic remote plasma chemical vapor deposited SiO[sub 2]/Al[sub 2]O[sub 3] stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC metal–oxide–semiconductor capacitors. Capacitance–voltage (C–V) and current–voltage (I–V) measurements were performed. C–V characteristics showed excellent properties at room and higher temperatures. Samples exhibited a slight negative flatband shift from which the net oxide charge (Q[sub ox]) was calculated. Low leakage currents were observed even at high temperatures. I–V characteristics of Al[sub 2]O[sub 3] were superior to those observed on AlN and SiO[sub 2] dielectrics on SiC. © 2001 American Institute of Physics.


Related Articles

  • Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface SiO[sub 2] formation. Roy Chowdhuri, A.; Takoudis, C. G.; Klie, R. F.; Browning, N. D. // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4241 

    Thin films of aluminum oxide were deposited on H-passivated Si(100) substrate using trimethylaluminum and oxygen at 0.5 Torr and 300 °C. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate phase at the film-substrate...

  • Nanoscale lateral epitaxial overgrowth of GaN on Si (111). Zang, K. Y.; Wang, Y. D.; Chua, S. J.; Wang, L. S. // Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p193106 

    We demonstrate that GaN can selectively grow by metalorganic chemical vapor deposition into the pores and laterally over the nanoscale patterned SiO2 mask on a template of GaN/AlN/ Si. The nanoporous SiO2 on GaN surface with pore diameter of approximately 65 nm and pore spacing of 110 nm was...

  • Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow. Kohama, Y.; Uchida, K.; Soga, T.; Jimbo, T.; Umeno, M. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p862 

    GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double-crystal x-ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half-maximum of the (400) reflection obtained from...

  • Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic.... Kim, J.; Alwan, J.J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p28 

    Examines the chemical characterization of indium-gallium arsenide (GaAs)/aluminum GaAs strained interfaces grown by metalorganic chemical vapor deposition. Determination of the Al or In content; Causes for the asymmetry of the indium-containing systems; Use of quantitative chemical mapping.

  • A new InP-based heterojunction bipolar transistor utilizing an.... Wu, Y.H.; Su, J.S. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p347 

    Demonstrates a lattice-matched indium aluminum gallium arsenic/indium phosphide grown by low-pressure metalorganic chemical vapor deposition. Manifestation of zero conduction band and large valence band discontinuities; Resolution of the potential spike energy in a direct measurement technique;...

  • A model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Amir, N.; Fekete, D.; Nemirovsky, Y. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p871 

    Presents a study which proposed a model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Details of the calculation of the solid composition; Comparisons of the predictions of the model with measured data; Results and...

  • Metalorganic chemical vapor deposition on mesoscopic-structured substrates with closed topologies. Ishibashi, Akira; Ogawa, Masamichi; Funato, Kenji; Ugajin, Ryuichi; Mori, Yoshifumi // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2117 

    Presents a study which performed metalorganic chemical vapor deposition (MOCVD) on substances of closed topologies. Background on MOCVD; Results of the study; Conclusion.

  • Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers. Aleksiejunas, R.; Sudžius, M.; Malinauskas, T.; Vaitkus, J.; Jarašiunas, K.; Sakai, S. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1157 

    Time-resolved nondegenerate four-wave mixing experiments were performed on 2.6-μm-thick GaN epilayers grown by metalorganic chemical-vapor deposition using picosecond pulses at 355 and 1064 nm for grating recording and probing, respectively. Measurements of free carrier grating kinetics at...

  • Simulation and characterization of the selective area growth process. Alam, M.A.; People, R.; Isaacs, E.; Kim, C.Y.; Evans-Lutterodt, K.; Siegrist, T.; Pernell, T.L.; Vandenberg, J.; Sputz, S.K.; Chu, S.N.G.; Lang, D.V.; Smith, L.; Hybertsen, M.S. // Applied Physics Letters;5/3/1999, Vol. 74 Issue 18, p2617 

    Interprets the metalorganic chemical vapor deposition technique called selective area growth (SAG) using a three-dimensional vapor phase model. Profiles of thickness predicted by the model; Long range effects of the thickness composition of metals; Uses of the SAG process; Key idea behind SAG.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics