Negative magnetoresistance produced by Hall fluctuations in a ferromagnetic domain structure

Barabash, Sergey V.; Stroud, D.
August 2001
Applied Physics Letters;8/13/2001, Vol. 79 Issue 7
Academic Journal
We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR is due to a classical current-distortion effect arising from spatial variations in the Hall conductivity, combined with a change in domain structure due to an applied magnetic field. The negative MR can exceed 1000% if the product of the carrier relaxation time and the internal magnetic field due to spontaneous magnetization is sufficiently large. © 2001 American Institute of Physics.


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