Optimum Er concentration for in situ doped GaN visible and infrared luminescence

Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
GaN thin films have been doped with varying Er concentrations (0.01–10 at. %) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f–4f inner shell transitions, exhibited a maximum at ∼1 at. % Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at. % Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at. % had a lifetime of ∼5 μs. For Er concentration >=1 at. %, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at. %. © 2001 American Institute of Physics.


Related Articles

  • Interimpurity transitions in heavily doped semiconductors. Park, S. H.; Choe, B. D. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5916 

    Reports on the first observation of theoretical predictions that the luminescence spectrum can have more than one peak depending on the temperature and pumping rate. Theories of the radiative recombination in heavily doped semiconductors; Variations of the spectral intensity of peak A and B as...

  • Room-temperature electroluminescence from Er-doped crystalline Si. Franzo, G.; Priolo, F. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2235 

    Determines the room-temperature electroluminescence (EL) of erbium (Er)-doped crystalline silicon. Fabrication of doped silicon by ion implantation; Comparison of EL intensity under varying biases; Occurrence of Er excitation through electro-hole mediated processes under forward and reverse bias.

  • Effect of free carriers on the luminescence efficiency of InP:Er. Wang, X.Z.; Wessels, B.W. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p845 

    Examines the effect of free carriers on the luminescence efficiency of erbium (Er)-doped indium phosphide. Relationship between carrier concentration and emission intensity; Factor attributed to the increase in carrier concentration; Role of Auger processes in determining Er[sup 3+]...

  • Photodarkening effects in semiconductor-doped glasses. Van Wonterghem, B.; Saltiel, S. M.; Dutton, T. E.; Rentzepis, P. M. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p4935 

    Focuses on a study which investigated the fading of the phase conjugation efficiency and luminescence quantum yield in semiconductor doped glasses. Information on semiconductor doped glasses; Methodology of the study; Results and discussion.

  • Time-dependence of luminescence of nanoparticles of Eu[sub 2]O[sub 3] and Tb[sub 2]O[sub 3] deposited on and doped in alumina. Gedanken, A.; Reisfeld, R.; Sominski, L.; Zhong, Z.; Koltypin, Yu.; Panczer, G.; Gaft, M.; Minti, H. // Applied Physics Letters;8/14/2000, Vol. 77 Issue 7 

    Nanoparticles of Eu[sub 2]O[sub 3] and Tb[sub 2]O[sub 3] have been prepared using ultrasound radiation and were deposited sonochemically on microspherical alumina particles. In a different sonochemical reaction Eu[sub 2]O[sub 3] and Tb[sub 2]O[sub 3] were doped into nanophased alumina particles....

  • Morphology and luminescent properties of Al3+/Mg2+-doped Y2O3:Eu3+ phosphor. Zhen Liu; Yang Feng; Dongmei Jiao; Na Zhang; Huan Jiao // Journal of Materials Science;Mar2008, Vol. 43 Issue 5, p1619 

    Al3+/Mg2+ doped Y2O3:Eu phosphor was synthesized by the glycine-nitrate solution combustion method. In contrast to Y2O3:Eu which showed an irregular shape of agglomerated particles (the mean particle size >10 μm), the morphology of Al3+/Mg2+ doped Y2O3:Eu crystals was quite regular. Al3+/Mg2+...

  • Effect of laser-induced defects on luminescence in InP crystals. Baimbetov, F. B.; Dzhumamukhambetov, N. G. // Semiconductors;Nov98, Vol. 32 Issue 11, p1187 

    Experimental data on luminescence in laser-modified InP crystals are compared with the theory of radiative recombination of heavily doped, compensated semiconductors. It is established that the band with maximum at 1.35 eV observed at 77 K is due to radiative transitions through the tails of the...

  • Edge Luminescence from Zinc Selenide Doped with Isovalent Magnesium Impurity. Sletov, M. M. // Technical Physics Letters;Jan2001, Vol. 27 Issue 1, p63 

    The electric and luminescent properties of zinc selenide crystals doped with the isovalent magnesium impurity were studied. It is demonstrated that low-resistivity n-type ZnSe layers with a dominating edge luminescence component can be obtained.

  • Preferential alignment of Er-2O centers in GaAs:Er,O reveled by anisotropic host-excited photoluminscence. Hogg, R.A.; Takahei, K.; Taguchi, A.; Horikoshi, Y. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3317 

    Presents a polarized spectroscopic study of the erbium-20 (Er-20) center in gallium arsenide:erbium,oxide. Detection of an optical anisotropy in the luminescence polarized along crystallographic directions; Preferential alignment of the Er-20 centers; Comparison with the luminescence center in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics