Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy

Nakazawa, Hideki; Suemitsu, Maki
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
By using monomethylsilane (MMS:H[sub 3]Si–CH[sub 3]), we have formed a Si[sub 1-x]C[sub x] interfacial buffer layer for 3C–SiC/Si(100) heteroepitaxy at substrate temperature T[sub f] of as low as 450–650 °C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C–SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C–SiC films degrade for T[sub f]<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si–H and Si–C bonds within the MMS molecule. © 2001 American Institute of Physics.


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