TITLE

Si/6H–SiC(0001): An unexpected cubic 4×3 Si phase overlayer

AUTHOR(S)
Amy, F.; Enriquez, H.; Soukiassian, P.; Brylinski, C.; Mayne, A.; Dujardin, G.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate Si deposition on the 6H–SiC(0001) 3×3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4×3 surface array. Such a 4×3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H–SiC(0001) system. These findings are relevant in silicon carbide oxidation. © 2001 American Institute of Physics.
ACCESSION #
4936922

 

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