Direct-to-indirect band gap crossover for the Be[sub x]Zn[sub 1-x]Te alloy

Maksimov, O.; Tamargo, M. C.
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
We have investigated the growth and optical properties of a set of Be[sub x]Zn[sub 1-x]Te epitaxial layers having different composition, with x ranging from 0–0.7. Comparison of the reflectivity and the photoluminescence spectra allowed us to locate the direct-to-indirect band gap crossover for this alloy at xapprox. 0.28. The Γ→Γ direct band gap exhibits a linear dependence on composition over the entire compositional range and can be fitted to the equation E[sup Γ][INF ARRANGE="STAGGER"]g](x)=2.26[sup *](1-x)+4.1[sup *]x. It increases linearly with BeTe content at a rate of 18 meV for a change of 1% in BeTe content. The Γ→X indirect band gap for Be[sub x]Zn[sub 1-x]Te can be fitted to the equation E[sup X][INF ARRANGE="STAGGER"]g](x)=3.05[sup *](1-x)+2.8[sup *]x-0.5[sup *]x[sup *](1-x), suggesting that the energy of the indirect Γ→X transition for ZnTe is about 3.05 eV. © 2001 American Institute of Physics.


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