Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy

Chang, J. H.; Takai, T.; Koo, B. H.; Song, J. S.; Handa, T.; Yao, T.
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
N-type ZnTe layers with high electron concentration are grown by molecular-beam epitaxy using aluminum as the donor species. The ZnTe:Al layers show a high structural quality with a narrow x-ray diffraction linewidth (24 arcsec) and a high carrier concentration up to n=4×10[sup 18] cm[sup -3] with low resistivity (ρ=0.017 Ω cm). The dependence of the electron mobility on the carrier concentration suggests that the dominant scattering mechanisms in the ZnTe:Al layers are ionized impurity scattering and polar optical phonon scattering. The photoluminescence spectrum of moderately doped ZnTe layers shows strong Al–donor-related bound exciton lines: I[sub 2] (2.378 eV) and donor–acceptor pair emission (zero phonon energy=2.324 eV) with a weak deep-level emission (2.19 eV). Highly Al-doped layers show an increase in the deep-level emission intensity and a decrease in carrier mobility, which are interpreted in terms of the increase in the carrier compensation. © 2001 American Institute of Physics.


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