TITLE

Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy

AUTHOR(S)
Chang, J. H.; Takai, T.; Koo, B. H.; Song, J. S.; Handa, T.; Yao, T.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N-type ZnTe layers with high electron concentration are grown by molecular-beam epitaxy using aluminum as the donor species. The ZnTe:Al layers show a high structural quality with a narrow x-ray diffraction linewidth (24 arcsec) and a high carrier concentration up to n=4×10[sup 18] cm[sup -3] with low resistivity (ρ=0.017 Ω cm). The dependence of the electron mobility on the carrier concentration suggests that the dominant scattering mechanisms in the ZnTe:Al layers are ionized impurity scattering and polar optical phonon scattering. The photoluminescence spectrum of moderately doped ZnTe layers shows strong Al–donor-related bound exciton lines: I[sub 2] (2.378 eV) and donor–acceptor pair emission (zero phonon energy=2.324 eV) with a weak deep-level emission (2.19 eV). Highly Al-doped layers show an increase in the deep-level emission intensity and a decrease in carrier mobility, which are interpreted in terms of the increase in the carrier compensation. © 2001 American Institute of Physics.
ACCESSION #
4936915

 

Related Articles

  • Influence of the As overpressure during the molecular beam epitaxy growth of Si-doped (211)A and.... Pavesi, L.; Henini, M. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2846 

    Investigates the influence of arsenic overpressure during molecular beam epitaxy (MBE) growth of silicon-doped (211)A and (311)A gallium arsenide (GaAs). Consequences of Si-doped GaAs growth on (211)A surface; Conversion of arsenic vacancy defect into Ga vacancy and Ga antisite defect;...

  • Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using.... Abernathy, C.R.; Wisk, P.W.; Pearton, S.J.; Ren, F. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p258 

    Investigates the feasibility of magnesium (Mg) doping using bis-cyclopentadienyl magnesium by metalorganic molecular beam epitaxy. Measurement of indium gallium arsenide (InGaAs) and indium phosphide (InP); Difference in the Mg incorporation rate between the InP and InGaAs; Factors affecting the...

  • Epitaxial growth of p-type ZnMgSSe. Okuyama, Hiroyuki; Kishita, Yuko // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p904 

    Examines the growth of n-doped p-type ZnMgSSe by molecular beam epitaxy. Induction of nitrogen by electron cyclotron resonance plasma; Observation on the maximum net acceptor concentration; Activation energy of the nitrogen acceptor; Determination of the band-gap energy.

  • Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells. Okuno, Tsuyoshi; Masumoto, Yasuaki; Sakuma, Yasushi; Hayasaki, Yuuichi; Okamoto, Hiroshi // Applied Physics Letters;8/6/2001, Vol. 79 Issue 6 

    We have investigated optical nonlinearity in beryllium-doped low-temperature (LT) molecular-beam-epitaxy-grown GaAs/AlAs multiple quantum wells (MQWs). The response time of the nonlinearity is reduced by Be doping in the MQW. While the undoped LT MQW shows a 0.7–0.9 ps response, the...

  • Luminescent Si—Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy. Shengurov, V. G.; Svetlov, S. P.; Chalkov, V. Yu.; Andreev, B. A.; Krasil’nik, Z. F.; Ber, B. Ya.; Drozdov, Yu. N.; Yablonsky, A. N. // Semiconductors;Jun2002, Vol. 36 Issue 6, p625 

    Erbium-doped Si[sub 1 - x]Ge[sub x] epitaxial layers have been grown by sublimation molecular-beam epitaxy (SMBE) in an atmosphere of germane (GeH[sub 4]). Doping with erbium was done during growth, with single-crystal Si:Er as the source of En The Si-Si[sub 1 - x]Ge[sub x] (0.01 ≤ x...

  • Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy. Sakamoto, N.; Hirakawa, K. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1444 

    Establishes a phase diagram for the conduction type by examining the dependence of the electrical properties of Si-doped (311)A GaAs on the growth condition in molecular beam epitaxy. Functions of the growth temperature and the V[sub4]/III flux ratio; Transition between the p- and n-type...

  • P-type arsenic doping of Hg[sub 1-x]Cd[sub x]Te by molecular beam epitaxy. Zandian, M.; Chen, A.C. // Applied Physics Letters;11/10/1997, Vol. 71 Issue 19, p2815 

    Investigates the growth of in situ arsenic (As) doped Hg[sub 1-x]Cd[sub x]Te by molecular beam epitaxy. Range of As activation; Effect of neutral As complex formation on the doping efficiency; Electrical characteristics of As doped p-type layers; Application of secondary ion mass spectrometry...

  • Magnetotransport of delta-doped In[sub 0.57]Ga[sub 0.43]As on InP(001) grown between 390 and 575° C by molecular beam epitaxy. Zervos, Matthew; Bryant, Adam; Elliott, Martin; Beck, Mathias; Ilegems, Marc // Applied Physics Letters;5/18/1998, Vol. 72 Issue 20 

    Silicon (Si) delta- (δ-) doped In[sub 0.53]Ga[sub 0.47]As layers were grown by molecular beam epitaxy on InP(001) substrates between 390 °C and 575 °C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect measurements in conjunction with self-consistent...

  • Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers. Mokerov, V. G.; Galiev, G. B.; Slepnev, Yu. V.; Khabarov, Yu. V. // Semiconductors;Nov98, Vol. 32 Issue 11, p1175 

    Photoluminescence (PL) spectra of GaAs (100), (111)A and (111)B layers grown by molecular-beam epitaxy at different ratios of the partial pressures P[sub As[sub 4]]/P[sub Ga]= ? are investigated. Depending on the crystal orientation and ? values, either two PL bands (B-Si bands) or a single PL...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics