Localized charge injection in SiO[sub 2] films containing silicon nanocrystals

Boer, Elizabeth A.; Brongersma, Mark L.; Atwater, Harry A.; Flagan, Richard C.; Bell, L. D.
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
An atomic-force microscope (AFM) is used to locally inject, detect, and quantify the amount and location of charge in SiO[sub 2] films containing Si nanocrystals (size ∼2–6 nm). By comparison with control samples, charge trapping is shown to be due to nanocrystals and not ion-implantation-induced defects in samples containing ion-beam-synthesized Si nanocrystals. Using an electrostatic model and AFM images of charge we have estimated the amount of charge injected in a typical experiment to be a few hundred electrons and the discharge rate to be ∼35±15 e/min. © 2001 American Institute of Physics.


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