TITLE

Electrical properties of LaAlO[sub 3]/Si and Sr[sub 0.8]Bi[sub 2.2]Ta[sub 2]O[sub 9]/LaAlO[sub 3]/Si structures

AUTHOR(S)
Park, Byung-Eun; Ishiwara, Hiroshi
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lanthanum aluminate (LaAlO[sub 3]) films were deposited on Si(100) substrates by evaporating single-crystal pellets in vacuum using an electron-beam gun. Then, they were annealed in N[sub 2] ambience at 700 °C for 10 min using an electric furnace. X-ray diffraction analysis showed that the LaAlO[sub 3] films were amorphous even after the annealing process. No hysteretic characteristics were observed in the capacitance–voltage (C–V) measurement and the dielectric constant of the LaAlO[sub 3] films was estimated to be 21–25. It was also found that the leakage current density decreased by about three orders of magnitude after the annealing process. On these films, Sr[sub 0.8]Bi[sub 2.2]Ta[sub 2]O[sub 9] films with 210 nm thickness were deposited by a sol–gel method. All samples annealed in O[sub 2] atmosphere at temperatures ranging from 650 to 750 °C showed hysteretic C–V characteristics, and the memory window width in the sample annealed at 750 °C for 30 min was about 3.0 V for a voltage sweep of ±10 V. It was also found that the capacitance values biased in the hysteresis loop were unchanged over 12 h. © 2001 American Institute of Physics.
ACCESSION #
4936908

 

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