Schottky barrier rectifier with high current density using vanadium as barrier metal

Kim, J. S.; Choi, H. H.; Son, S. H.; Choi, S. Y.
August 2001
Applied Physics Letters;8/6/2001, Vol. 79 Issue 6
Academic Journal
This letter reports on an improved forward voltage drop (V[sub F]) and reverse leakage current (I[sub R]) in Schottky barrier rectifier using vanadium (V–SBR) as the barrier metal with a low barrier height (&fgr;[sub B]) and argon implantation. The V[sub F] for a V–SBR was as low as 0.25 V compared to 0.39 V for a molybdenum (Mo)–SBR at the same forward current density (J[sub F]) of 60 A/cm[sup 2]. This study was able to achieve a good result for J[sub F] in SBR. Presently, the conventional Schottky rectifier with a low &fgr;[sub B] metal is used to achieve low V[sub F], but at the expense of a high I[sub R]. To reduce this effect, crystalline Si was altered into amorphous Si using argon implantation on the n-epitaxial layer. Finally, a SBR with a high J[sub F] and low I[sub R] could be fabricated. © 2001 American Institute of Physics.


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