Quantum capacitance and density of states of graphene

Dröscher, S.; Roulleau, P.; Molitor, F.; Studerus, P.; Stampfer, C.; Ensslin, K.; Ihn, T.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p152104
Academic Journal
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.


Related Articles

  • Modeling of Quantum Capacitance in Graphene Nanoribbon. Johari, Zaharah; Amin, N. Aziziah; Ahmadi, Mohammad Taghi; Chek, Desmond C. Y.; Mousavi, S. Mahdi; Ismail, Razali // AIP Conference Proceedings;5/25/2011, Vol. 1341 Issue 1, p384 

    The capacitance in the classical approach is completely determined by the device geometry and a dielectric constant of the medium. However, the quantum effects will give significant impact on the device performance once the transistor approaches the size of nanoscale device and hence the quantum...

  • Quantum electrical capacitance in epitaxial graphene. Alisultanov, Z. Z.; Rustamova, D. M.; Habibulaeva, A. M. // Low Temperature Physics;Nov2015, Vol. 41 Issue 11, p911 

    We used a simple model to investigate the quantum electrical capacitance of epitaxial graphene, which changes abruptly at the boundary between permitted and forbidden energies. We studied a case of a size-quantized substrate. We obtained energy, temperature, and concentration dependences. Some...

  • A computational study of high-frequency behavior of graphene field-effect transistors. Chauhan, Jyotsna; Liu, Leitao; Lu, Yang; Guo, Jing // Journal of Applied Physics;May2012, Vol. 111 Issue 9, p094313 

    High Frequency potential of graphene field-effect transistors (FETs) is explored by quasi-static self-consistent ballistic and dissipative quantum transport simulations. The unity power gain frequency fMAX and the cut-off frequency fT are modeled at the ballistic limit and in the presence of...

  • CARBON NANOTUBE CAPACITANCE MODEL IN DEGENERATE AND NONDEGENERATE REGIMES. Ahmadi, M. T.; Webb, J. F.; Amin, N. A.; Mousavi, S. M.; Sadeghi, H.; Neilchiyan, M. R.; Ismail, R. // AIP Conference Proceedings;6/20/2011, Vol. 1337 Issue 1, p173 

    In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one-dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nan-otube field effect transistor is discussed. A quantum capacitance as...

  • A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor. Namkyu Cho, Edward; Yong Hyeon Shin; Ilgu Yun // Journal of Applied Physics;2014, Vol. 116 Issue 17, p174507-1 

    A compact quantum correction model for a symmetric double gate (DG) metal-oxidesemiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔVTHQM) and the gate capacitance (Cg) degradation....

  • Measurement of the quantum capacitance of interacting electrons in carbon nanotubes. Ilani, S.; Donev, L. A. K.; Kindermann, M.; McEuen, P. L. // Nature Physics;Oct2006, Vol. 2 Issue 10, p687 

    The electronic capacitance of a one-dimensional system such as a carbon nanotube is a thermodynamic quantity that contains fundamental information about the ground state. It is composed of an electrostatic component describing the interactions between electrons and their correlations, and a...

  • Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density. Sˇermuksˇnis, E.; Liberis, J.; Ramonas, M.; Matulionis, A.; Leach, J. H.; Wu, M.; Avrutin, V.; Morkoç, H. // Applied Physics Letters;7/25/2011, Vol. 99 Issue 4, p043501 

    Fluctuation technique is used to measure hot-phonon lifetime in dual channel GaN-based configuration proposed to support high-power operation at high frequencies. The channel is formed of a composite Al0.1Ga0.9N/GaN structure situated in an Al0.82In0.18N/AlN/Al0.1Ga0.9N/GaN heterostructure....

  • Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement. Schubert, E. F.; Kopf, R. F.; Kuo, J. M.; Luftman, H. S.; Garbinski, P. A. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p497 

    The spatial resolution of the capacitance-voltage profiling technique on semiconductors with one-dimensional quantum confinement is shown to be given by the spatial extent of the wave function. The Debye length limitation does not apply. Capacitance-voltage profiles on δ-doped GaAs of density...

  • An exactly solvable model for the graphene transistor in the quantum capacitance limit. Parrish, Kristen N.; Akinwande, Deji // Applied Physics Letters;7/30/2012, Vol. 101 Issue 5, p053501 

    We explore the ultimate behavior of the graphene transistor in the quantum capacitance limit. The quantum capacitance formulation allows for an exactly solvable model, and the ideal assumptions provide an upper bound on performance, including peak currents of 1 mA/μm with mobilities as low as...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics