Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

Jin, C. Y.; Ohta, S.; Hopkinson, M.; Kojima, O.; Kita, T.; Wada, O.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151104
Academic Journal
We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1-xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1-xNx well and InAs dot layer has been studied by temperature-dependent photoluminescence. Although the 2.5 nm barrier sample exhibits the best tunneling efficiency, a 3.0 nm thickness for the barrier is optimum to retain good optical properties. The carrier capture time from the GaAs1-xNx QW to QD ground states has been evaluated by time-resolved photoluminescence. The result indicates that efficient carrier tunneling occurs at temperatures above 150 K due to the temperature dependent nature of phonon-assisted processes.


Related Articles

  • Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots. Patane, A. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p2005 

    Investigates the properties of double barrier resonant tunneling diodes (RTD) in quantum wells containing self-assembled quantum dots. Use of resonant tunneling and photoluminescence spectroscopy; Effect of quantum dots on electronic states and charge distribution on RTD; Possibility of using...

  • Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters. Lin, S. D.; Lee, C. P. // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p2952 

    Using InGaAs quantum well emitters, AlGaAs/GaAs double barrier resonant tunneling diodes with and without self-assembled InAs/GaAs quantum dots (QDs) have been studied extensively. Because the energy state of the emitter was lower than the level of the ground state within InAs QDs, the resonant...

  • Efficient quantum well to quantum dot tunneling: Analytical solutions. Chuang, S. L.; Holonyak, N. // Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1270 

    Tunneling transfer of carriers from a quantum well (collector) into a quantum dot is investigated theoretically using the transition-probability approach of Bardeen. The approach is attractive since it allows analysis of the tunneling rate using the wave function of the initial state in the...

  • Carrier transfer in the GaAs-based tunnel injection quantum well-quantum dots structures. Syperek, M.; Leszczynski, P.; Rudno-Rudzinski, W.; hooked_ee, G.; Andrzejewski, J.; Misiewicz, J.; Pavelescu, E. M.; Gilfert, C.; Reithmaier, J. P. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p571 

    The time-resolved photoluminescence experiment has been used to examine temperature dependent dynamics in the quantum well-quantum dots tunnel injection structures. The obtained pictures of the photoluminescence kinetics for the reference quantum dots and tunnel injection structures indicate a...

  • Formation of coupled three-dimensional GeSi quantum dot crystals. Ma, Y. J.; Zhong, Z.; Lv, Q.; Zhou, T.; Yang, X. J.; Fan, Y. L.; Wu, Y. Q.; Zou, J.; Jiang, Z. M. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p153113 

    Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombination and its transverse-optical (TO) phonon replica of excitons in QDs. With...

  • Strain-induced quantum dots be self-organized stressors. Sopanen, M.; Lipsanen, H. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2364 

    Presents an in situ method of producing quantum dots. Observation of three-dimensional confinement of carriers to a GaInAs quantum well; Identification of two transitions arising from the strain-induced quantum dots; Examination of the luminescence from the higher electronic states of the...

  • Observation of increased photoluminescence decay time in strain-induced quantum-well dots. I-Hsing Tan; Ying-Lan Chang; Mirin, Richard; Hu, Evelyn; Merz, James; Yasuda, Takashi; Segawa, Yusaburo // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1376 

    Demonstrates increased of photoluminescence decay time in strained-induced quantum well (QW) dots. Occurrence of lateral confinement in a gallium arsenide QW; Resolution of strain confinement and vertical strain propagation; Effects of reduced dimensionality on hot carrier cooling rate.

  • Photoluminescence properties of MgS/CdSe quantum wells and quantum dots. Funato, M.; Balocchi, A.; Bradford, C.; Prior, K. A.; Cavenett, B. C. // Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p443 

    The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 ML results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by...

  • Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Obermuller, C.; Deisenrieder, A. // Applied Physics Letters;5/24/1999, Vol. 74 Issue 21, p3200 

    Studies the photoluminescence of InP strained-induced quantum dots in a GaInAs/GaAs quantum well. Spatial resolution of photoluminescence of the lower energy level; Mapping of photoluminescence in higher excited estates; Pauli-blocking imaging of the quantum dots.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics