TITLE

Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

AUTHOR(S)
Jin, C. Y.; Ohta, S.; Hopkinson, M.; Kojima, O.; Kita, T.; Wada, O.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1-xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1-xNx well and InAs dot layer has been studied by temperature-dependent photoluminescence. Although the 2.5 nm barrier sample exhibits the best tunneling efficiency, a 3.0 nm thickness for the barrier is optimum to retain good optical properties. The carrier capture time from the GaAs1-xNx QW to QD ground states has been evaluated by time-resolved photoluminescence. The result indicates that efficient carrier tunneling occurs at temperatures above 150 K due to the temperature dependent nature of phonon-assisted processes.
ACCESSION #
49193330

 

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