Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics

Wei-Yang Chou; Bo-Liang Yeh
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p153302
Academic Journal
We integrated pentacene- and NN′-diheptyl-3,4,9,10-perylenebiscarboximide-based transistors into an organic complementary metal oxide semiconductor (O-CMOS) whose gate-dielectric surface was modified by polyimide (PI). The hysteresis behaviors in metal-oxide-semiconductors, field-effect transistors, and O-CMOS were reported clearly. Measurements of hysteresis showed that the PI exhibited high trapping and detrapping speeds for charge carriers, including holes and electrons, to result in high performance transistors and O-CMOSs; moreover, the trapping and detrapping speeds were matched. Finally, a PI-modified organic inverter with little hysteresis, low static power dissipation, high noise margins, and switching voltage near VDD/2 was achieved simultaneously.


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