TITLE

Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics

AUTHOR(S)
Wei-Yang Chou; Bo-Liang Yeh
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p153302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We integrated pentacene- and NN′-diheptyl-3,4,9,10-perylenebiscarboximide-based transistors into an organic complementary metal oxide semiconductor (O-CMOS) whose gate-dielectric surface was modified by polyimide (PI). The hysteresis behaviors in metal-oxide-semiconductors, field-effect transistors, and O-CMOS were reported clearly. Measurements of hysteresis showed that the PI exhibited high trapping and detrapping speeds for charge carriers, including holes and electrons, to result in high performance transistors and O-CMOSs; moreover, the trapping and detrapping speeds were matched. Finally, a PI-modified organic inverter with little hysteresis, low static power dissipation, high noise margins, and switching voltage near VDD/2 was achieved simultaneously.
ACCESSION #
49193323

 

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