Thermal stability comparison of TaN on HfO2 and Al2O3

Jinhee Kwon; Chabal, Yves J.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151907
Academic Journal
Changes in gate stacks (TaN/high-κ/SiO2/Si) are investigated during thermal processing using in situ Fourier transform infrared spectroscopy. Ta–O bonds, present in the initial tantalum nitride films, are crystallized in contact with HfO2 at 700–800 °C and completely dissociate at 900 °C, resulting in a microcrystalline TaNx phase. The TaN remains amorphous, however, with Al2O3 as the underlying dielectric layer. A partial reduction into a metallic Ta occurs after dissociation of Ta–N and Ta–O bonds, and Al2O3 decomposes at 700 °C. Dissociated Al atoms diffuse into all the neighboring layers to form silicate and Ta- and N-bound Al.


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