Atomic resolution in tunneling induced light emission from GaAs(110)

Reinhardt, Maria; Schull, Guillaume; Ebert, Philipp; Berndt, Richard
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p152107
Academic Journal
A cryogenic scanning tunneling microscope is used to induce band edge luminescence from GaAs(110). The emission intensity varies within the unit mesh of the surface. This atomic resolution reflects variations of the efficiency of hole injection into states at the valence band maximum. Moreover, the hole injection efficiency is modulated by local potential fluctuations due to dopants.


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