Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Zhengxin Liu; Takato, Hidetaka; Togashi, Chiho; Sakata, Isao
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p153503
Academic Journal
Spin-on doping of phosphorus has been investigated and applied for the emitter fabrication of crystalline Si solar cells. Heat treatment in oxygen atmosphere at relatively low temperature of 550 °C prior to phosphorus diffusion is proved effective for improving solar cell performance, showing a conversion efficiency enhancement of more than 0.2% absolute. Internal quantum efficiency measurements show obvious enhancements at both short and long-wavelength regions. Secondary ion mass spectroscopy and Infrared absorption analysis reveal reduced C impurities after the heat treatment, possibly caused by burning the organic residues in the coated dopant source layer.


Related Articles

  • Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy. Donny Lai; Yew Heng Tan; Gunawan, Oki; Lining He; Chuan Seng Tan // Applied Physics Letters;7/4/2011, Vol. 99 Issue 1, p011102 

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar...

  • Random and channeled implantation profiles and range parameters for P and Al in crystalline and amorphized Si. Wilson, R. G. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2797 

    Focuses on a study that implanted and annealed depth distributions for Aluminum and Phosphorus, adjacent to Silicon, using secondary ion mass spectrometry. Depth distributions of phosphorus implanted at various energies and fluences into float-zoned crystalline silicon; Effect of implant...

  • Phosphorus diffusion gettering of gold in silicon: The reversibility of the gettering process. Sveinbjörnsson, Einar Ö.; Engström, Olof; Södervall, Ulf // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7311 

    Presents a study which examined the phosphorus diffusion gettering of gold in silicon using secondary ion-mass spectroscopy. Effect of phosphorus predeposition temperature on the gettering process; Experimental details; Results and discussion; Conclusions.

  • Thermal conduction in doped single-crystal silicon films. Asheghi, M.; Kurabayashi, K.; Kasnavi, R.; Goodson, K. E. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5079 

    This work measures the thermal conductivities along free-standing silicon layers doped with boron and phosphorus at concentrations ranging from 1×10[sup 17] to 3×10[sup 19] cm[sup -3] at temperatures between 15 and 300 K. The impurity concentrations are measured using secondary ion mass...

  • Codiffusion of arsenic and phosphorus implanted in silicon. Solmi, S.; Maccagnani, P.; Canteri, R. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5005 

    Investigates the codiffusion of arsenic and phosphorus (P) implanted in silicon after annealing at different concentrations of the dopants. Use of secondary-ion-mass spectroscopy and Hall measurements; Overview of the fabrication of graded shallow junctions with a high-surface-carrier...

  • Enhanced diffusion of antimony within a heavily phosphorus-doped layer. Nishi, Kenji; Sakamoto, Kouichi; Ueda, Jun // Journal of Applied Physics;6/15/1986, Vol. 59 Issue 12, p4177 

    Presents information on a study which examined the antimony diffusion within a phosphorus-doped silicon layer. Measurement of antimony and phosphorus profiles using secondary ion mass spectroscopy; Equation for the numerical calculation of antimony flux.

  • Reproducible leaky tube diffusion of Cd in InP at 500 °C. Wheeler, C. B.; Roedel, R. J.; Nelson, Randall W.; Schauer, Stephan N.; Williams, Peter // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p969 

    Presents a study which reported the application of the leaky tube method to diffuse elemental cadmium (Cd) into InP. Description of the leaky tube apparatus; Characteristics of the Cd samples upon removal of the SiO[sub2] cap layer; Result of secondary ion mass spectroscopy on Cd profile;...

  • Enhanced phosphorus diffusion during the glow discharge deposition of n-type amorphous silicon.... Jeng-Shiuh Chou; Jeng-Hua Wei // Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3060 

    Investigates phosphorus diffusion of n-type amorphous silicon hydrogen alloy during the glow discharge deposition. Usage of secondary ion mass spectroscopy; Enhancement of phosphorus diffusion by atomic hydrogen; Lack of effect of thermal annealing and hydrogen evolution on the diffusion process.

  • Effect of Thermal Oxidation on the Segregation of Phosphorus Implanted into Silicon. Aleksandrov, O. V.; Afonin, N. N. // Inorganic Materials;Sep2005, Vol. 41 Issue 9, p972 

    Secondary ion mass spectrometry and numerical simulation are used to investigate phosphorus diffusion and segregation in the SiO2-Si(111) system during the thermal oxidation of phosphorus-ion-implanted silicon layers in dry and humid oxygen between 950 and 1150�C. The results demonstrate...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics