Microcavity enhanced silicon light emitting pn-diode

Potfajova, J.; Schmidt, B.; Helm, M.; Gemming, T.; Benyoucef, M.; Rastelli, A.; Schmidt, O. G.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151113
Academic Journal
An electrically driven silicon light emitting diode with two distributed Bragg reflectors is reported. The active material is a Si pn-junction fabricated by boron ion implantation into an n-type silicon-on-insulator wafer. The cavity with a thickness of a few wavelengths is formed by amorphous Si/SiO2 multilayer stacks. A strong narrowing and enhancement of the electroluminescence at a resonant wavelength of λ=1146 nm is observed with a quality factor of Q=143 and a finesse of F=11.


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