Fermi level depinning at the germanium Schottky interface through sulfur passivation

Thathachary, Arun V.; Bhat, K. N.; Bhat, Navakanta; Hegde, M. S.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p152108
Academic Journal
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous (NH4)2S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming that the Fermi level is depinned. Examination of the passivated surface using x-ray photoelectron spectroscopy reveals bonding between Ge and sulfur. It is shown that good Ohmic contacts to n-type Ge and a hole barrier height ([lowercase_phi_synonym]Bp) of 0.6 eV to p-type Ge can be achieved after this passivation treatment, with Zr Schottky contacts. This is the highest [lowercase_phi_synonym]Bp reported so far.


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